ji angsu changjiang electronics technology co., ltd sop8 plastic-encapsulate mosfets CJQ9926 dual n-chan nel mosfet feature z advanced trench process technology z high density cell design fo r ultra low on-resistance z high power and current handing cap ability z ideal for liion battery pack applications marking maximum ratings (t a =25 unless other wise noted) paramete r symbol value unit drain-sourc e voltage v ds 20 v gate-source vo ltage v gs 12 v continuo us drain current * i d 4.8 a pulsed drain current i dm 30 a pow er dissipation * p d 1.25 w thermal resist ance from junction to ambient * r ja 100 / w junction temperature t j 150 storage te mperature t stg -55~+ 150 * surface mounted on 1? x 1? fr4 board. v (br) dss r ds(on) max i d 20 v 40 m @ 2.5 v ? 4.8 a ? 30 m 4.5 v ? @ sop8 equivalent circuit www.cj-elec.com 1 d , ma r ,201 6 soli d dot = green molding compound device, if none,the normal device. q9926 = device co de yy = d ate code soli d dot = pin1 indicator
parameter symbol test conditio n min typ max unit static charac teristics drain-source breakdow n voltage v (br)dss v gs = 0v, i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs = 0v 1 a gate-body leakage current i gss v gs =12v, v ds = 0v 100 na gate threshold voltage (note 1) v gs(th) v ds =v gs , i d =250a 0.6 1.0 1.2 v v gs =2.5v, i d =5a 28 40 m ? drain-source on-resistance (n ote 1) r ds(on) v gs =4.5v, i d =6a 20 30 m ? forward transconductanc e (note 1) g fs v ds =15v, i d =6a 15 s switching characte ristics (note 2) turn-on delay time t d(on) 35 ns turn-on rise time t r 60 ns turn-off delay time t d(off) 75 ns turn-off fall time t f v gen =4.5v,v dd =15v, r gen =6 ?, i d =1a, r l =15 ? 30 ns total gate charge q g 20 nc gate-source charge q gs 3 nc gate-drain charge q gd v ds =15v,v gs =4.5v,i d =6a 3.3 nc source-drain diode charact eristics maximum diode forward curr e nt i s 1 a diode forward voltage (note 1 ) v sd i s =1.7a,v gs =0v 1.2 v source-drain reverse recovery ti me t rr i f = 1.7 a, di/dt = 100 a/ s 80 ns notes : 1. pulse test : pulse width 3 00s, duty cycle 2%. 2. guaranteed by design, not subject to production 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 a t =25 / unless otherwise specified www.cj-elec.com 2 d,mar,2016 d ynamic characteristics (note 2) input capacitance c lss 640 pf output capacitance c oss 140 p f reverse transfer capacitance c rss v ds =10v,v gs =0v, i =1.0mhz 80 pf
024681 0 0 20 40 60 80 100 0123 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 024681 0 0 5 10 15 20 25 30 0 6 12 18 24 30 0 20 40 60 80 i d =6a i d r ds(on) ta=25 o c v gs r ds(on) gate to source voltage v gs (v) ta=25 o c transfer characteris tics drain current i d (a) gate to source voltage v gs (v) 20 ta=25 o c 0.3 3 v sd i s source current i s (a) source to drain voltage v sd (v) 3.0v 2.5v v gs =5.0v 4.5v 4.0v 3.5v v gs =1.5v 2.0v output charact eristics drain current i d (a) drain to source voltage v ds (v) on-resistance r ds(on) (m ) on-resistance r ds(on) (m ) v gs =2.5v v gs =4.5v ta=25 o c drain current i d (a) 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 d,mar,2016
sop8 package outline dimensions sop8 suggested pad layout mi n max mi n max a a1 0.100 0.250 0.004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069 www.cj-elec.com 4 d,mar,2016
6 2 3 7 d s h d q g 5 h h o z z z f m h o h f f r p ' 0 d u 5 ( ( / 5 h h o 6 l ] h % r [ % r [ 6 l ] h p p & d u w r q & d u w r q 6 l ] h p p * : n j s f v l q f k s f v ? ? s f v ? ? 5 h h o 2 s w l r q
' l d ' l p h q v l r q v d u h l q p l o o l p h w h u ' ' ' * + , : : ? 5 5 5
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